Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O8 2– ions
نویسندگان
چکیده
منابع مشابه
Synthesis Porous GaN by Using UV-assisted Electrochemical Etching and Its Optical Studies
The PL of porous GaN sample shows higher intensity with smaller FWHM and red-shifting relative to the as-grown sample. The energy gap for porous GaN sample was smaller compare to the as-grown sample. The SEM surface image of UV-assisted electrochemical etching process is shown a shape and size of pore which was formed on the surface of the GaN, therefore the shape of pores formed was in spheric...
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2019
ISSN: 1882-0778,1882-0786
DOI: 10.7567/1882-0786/ab21a1